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  d a t a sh eet product speci?cation file under integrated circuits, ic02 1998 nov 09 integrated circuits TDA9829T downconverter for dvb
1998 nov 09 2 philips semiconductors product speci?cation downconverter for dvb TDA9829T features 5 v supply voltage gain controlled if-amplifier mixer for dvb-if downconversion vco for quadrature amplitude modulation (qam) carrier recovery external vco control internal and external agc dvb output level adjust via agc adjust high level dvb operational output amplifier mute switch for dvb output tuner agc with adjustable takeover point (top) afc detector without extra reference circuit stabilizer circuit for ripple rejection and to achieve constant output signals. general description the TDA9829T is an integrated circuit for dvb-if processing. quick reference data notes 1. performance may be decreased at v p = 4.5 v. 2. this parameter is not tested during production and is only given as application information for designing the television receiver. 3. to match the afc output signal to different tuning systems a current source output is provided. the test circuit is given in fig.4. the afc-steepness can be changed by the resistors at pin 14. 4. depending on the ratio d c/c 0 of the lc resonant circuit of vco (q 0 > 50; c 0 =c int +c ext ; see table 2). symbol parameter conditions min. typ. max. unit v p supply voltage note 1 4.5 5.0 5.5 v i p supply current 81 96 111 ma v 3-4(rms) input sensitivity (rms value) - 1 db dvb signal at output - 100 150 m v dj ssb vco phase noise f = 100 khz; free-running 103 107 - dbc/hz a mute mute attenuation note 2 - 36 - db i 12(sink) sink current maximum tuner gain reduction; see fig.3 1.5 2 2.6 ma cr stps(us) control steepness d i 14 / d f if for usa f if = 43.75 mhz; notes 3 and 4; see fig.4 0.7 0.98 1.3 m a/khz v 11(p-p) output voltage (peak-to-peak value) c l < 15 pf; r l >5k w ; with internal agc 1.8 2.1 2.4 v b - 1db - 1 db bandwidth c l < 15 pf; r l >5k w 11 12 - mhz a h suppression of in-band harmonics v o = 2.0 v (p-p) 30 35 - db psrr power supply ripple rejection at pin 11 see fig.5 26 36 - db
1998 nov 09 3 philips semiconductors product speci?cation downconverter for dvb TDA9829T ordering information block diagram type number package name description version TDA9829T so20 plastic small outline package; 20 leads; body width 7.5 mm sot163-1 fig.1 block diagram. handbook, full pagewidth mhb219 TDA9829T vco twd dvb if filter afc detector 16 2 f pc 15 11 14 tuner agc dvb agc 9 18 12 5 3 4 19 17 1 20 6 10 dvb mixer logic internal voltage stabilizer 8 2, 7, 13 c agc top tadj v agc agcadj v vco c agc vco1 afc vco2 tagc tuner agc dvb agc adjust dvb agc external dvb external vco control v sid agcswi n.c. muteswi v p gnd + 5 v 2 v (p-p) v odvb dvb-if input v iif1 v iif2
1998 nov 09 4 philips semiconductors product speci?cation downconverter for dvb TDA9829T pinning symbol pin description v sid 1 sif down input n.c. 2 not connected v iif1 3 if differential input signal voltage 1 v iif2 4 if differential input signal voltage 2 tadj 5 tuner agc takeover adjust (top) agcswi 6 agc switch input n.c. 7 not connected v agc 8 agc voltage input agcadj 9 agc adjust input v vco 10 vco control voltage v odvb 11 dvb output tagc 12 tuner agc output n.c. 13 not connected afc 14 afc output vco1 15 vco1 reference circuit vco2 16 vco2 reference circuit gnd 17 ground c agc 18 agc capacitor v p 19 supply voltage (+5 v) muteswi 20 mute switch input fig.2 pin configuration. handbook, halfpage v sid n.c. v iif1 v iif2 tadj agcswi n.c. v agc agcadj v vco muteswi v p c agc gnd vco1 afc vco2 n.c. tagc v odvb 1 2 3 4 5 6 7 8 9 10 11 12 20 19 18 17 16 15 14 13 TDA9829T mhb220
1998 nov 09 5 philips semiconductors product speci?cation downconverter for dvb TDA9829T functional description vision if ampli?er the vision if amplifier consists of three ac-coupled differential amplifier stages. each differential stage comprises a feedback network controlled by emitter degeneration to control the if gain. vco, travelling wave divider (twd) and afc the vco operates with a resonance circuit (with l and c in parallel) at double the if frequency plus symbol frequency. the vco is controlled by integrated variable capacitors. the control voltage required to tune the vco from its free-running frequency to its actual frequency is fed to the capacitors. this control voltage is amplified and converted into a current which represents the afc output signal. at centre frequency the afc output current is equal to zero. the oscillator signal is divided-by-two with a twd which generates a differential output signal for downconverting the if signal. dvb mixer the gain controlled dvb-if signal is downconverted to the symbol frequency by use of a four quadrant multiplier. the conversion signal is provided by the vco and twd. dvb agc and tuner agc the agc detector charges/discharges the agc capacitor to the required voltage for setting the if and tuner gain in order to keep the dvb signal at a constant level. a peak detector is used for the dvb agc. the peak value of (digital) the qam signal is detected and controlled to a constant value by the variable gain if amplifier. the detector bandwidth is adapted to the symbol frequency (3 to 11 mhz). the external agc time constant is given by the if agc capacitor at pin 18. the agc capacitor voltage is transferred to an internal if control signal, and is fed to the tuner agc to generate the tuner agc output current (open-collector output). the tuner agc takeover point can be adjusted. this allows the tuner and the swif filter to be matched to achieve the optimum if input level. the dvb output signal (v odvb ) can be adjusted in a range of 3 db by a control voltage ( d v adj ) at pin 9. the internal agc can be switched off at pin 6 and the if gain can be controlled by an external voltage at pin 8. the tuner agc is active in both instances. dvb output ampli?er the output amplifier for the dvb signal has a high bandwidth and delivers a 2 v (p-p) signal. the amplifier can be switched to a mute state forced by the signal at pin 20. internal voltage stabilizer a band gap circuit internally generates a voltage of approximately 1.25 v, independent of supply voltage and temperature. a voltage regulator circuit, connected to this voltage, produces a constant voltage of 3.6 v which is used as an internal reference voltage. limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v p supply voltage (pin 19) maximum chip temperature of 125 c 0 5.5 v v n voltage at pins 1 to 10, 13, 14 and 18 to 20 0v p v t sc(max) maximum short-circuit time - 10 s v 12 tuner agc output voltage 0 13.2 v t stg storage temperature - 25 +150 c t amb operating ambient temperature - 20 +70 c v es electrostatic handling voltage machine model class b - 300 +300 v
1998 nov 09 6 philips semiconductors product speci?cation downconverter for dvb TDA9829T thermal characteristics characteristics v p =5v; t amb =25 c; see table 1 for input frequencies; input level v iif(3 - 4) = 10 mv (rms value); measurements taken in fig.8; unless otherwise speci?ed. symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air 85 k/w symbol parameter conditions min. typ. max. unit supply (pin 19) v p supply voltage note 1 4.5 5.0 5.5 v i p supply current 81 96 111 ma if ampli?er (measured at f if = 43.75 mhz; pins 3 and 4) d v (3-4)(rms) input sensitivity (rms value) - 1 db dvb signal at output - 100 150 m v v i(3-4)(rms) maximum input signal level (rms value) 1 db dvb signal at output 140 200 - mv d g if total gain control if ampli?er 59 64 - db tilt for d f 3 mhz f s = 6.9 mhz; 40 db gain - 0.5 1 db r i(3-4)(diff) input resistance (differential) note 2 - 2.2 - k w c i(3-4)(diff) input capacitance (differential) note 2 - 1.7 - pf dvb mixer and vco (pins 10, 15 and 16); see notes 4 and 5 and table 1 f vco(max) maximum oscillator frequency 2(f if +f s ) 125 130 - mhz f vco(us) vco frequency for usa 2(f if +f s ) - 97.5 - mhz f vco(eu) vco frequency for europe 2(f if +f s ) - 86.0 - mhz v ref(rms) oscillator voltage swing between pins 15 and 16 (rms value) - 60 - mv dj ssb vco phase noise f = 100 khz; free-running 103 107 - dbc/hz v vco vco control range (pin 10) see figs 6 and 7 0 - v p v r i(vco) vco control input resistance (pin 10) 50 63 76 k w cr stps(vco) control steepness d f s / d v 10 see figs 6 and 7 dvb (usa) - 0.29 - mhz/v dvb (europe) - 0.40 - mhz/v dvb output ampli?er (pins 11 and 20) v o(dvb)(p-p) dvb output signal (qam) (peak-to-peak value) 1.8 2.1 2.4 v i bias(int) dc internal bias current for emitter-follower (pin 11) 1.9 2.3 2.7 ma i sink(max) maximum ac and dc output sink current (pin 11) 1.5 -- ma i source(max) maximum ac and dc output source current (pin 11) 2.0 -- ma
1998 nov 09 7 philips semiconductors product speci?cation downconverter for dvb TDA9829T a mute mute attenuation note 2 - 36 - db v i(mute) mute switch input voltage (pin 20) dvb mute; note 3 1.3 - v p v dvb no mute 0 - 0.8 v i il low-level input current (pin 20) v 20 = 0 v 180 230 280 m a dvb agc detector (pins 8, 9 and 18) t resp response to an increasing amplitude step in the if input signal note 6 - 0.25 - ms/db response to a decreasing amplitude step in the if input signal note 6 - 0.25 - ms/db i ch charging current (pin 18) - 200 -m a i dch discharging current (pin 18) - 200 -m a d v i(agc) agc adjust input voltage range (pin 9) 1 2.5 4.5 v d r i(agc) agc adjust input resistance (pin 9) 8 1012k w d agc stps agc adjust steepness 2 v < v 9 <3v -- 5 - db/v v agc(ext) external agc voltage for dvb (pin 8) see fig.3 1 - 4.5 v r i(agc)(ext) external agc input resistance (pin 8) 40 -- k w tuner agc (pin 12) v i(min)(rms) if input signal voltage for minimum starting point of tuner takeover (rms value) input at pins 3 and 4; r top =22k w; i tagc = 0.4 ma - 25mv v i(max)(rms) if input signal voltage for maximum starting point of tuner takeover (rms value) input at pins 3 and 4; r top =0 w; i tagc = 0.4 ma 50 100 - mv v o permissible output voltage from external source; note 2 -- 13.2 v v sat saturation voltage i tagc = 1.5 ma -- 0.2 v variation of takeover point by temperature i tagc = 0.4 ma - 0.03 0.07 db/k i sink sink current see fig.3 no tuner gain reduction; v tagc = 13.2 v -- 5 m a maximum tuner gain reduction 1.5 2 2.6 ma symbol parameter conditions min. typ. max. unit v d top 12 , t d ----------------------- -
1998 nov 09 8 philips semiconductors product speci?cation downconverter for dvb TDA9829T notes 1. performance may be decreased at v p = 4.5 v. 2. this parameter is not tested during production and is only given as application information for designing the television receiver. 3. mute state also can be achieved by leaving pin 20 open-circuit. 4. resonance circuit of vco: q 0 > 50; c ext , c int and l see table 2. 5. temperature coefficient of external lc-circuit is equal to zero. 6. response speed valid for an if input level range of 200 m vupto70mv. 7. to match the afc output signal to different tuning systems a current source output is provided. the test circuit is given in fig.4. the afc steepness can be changed by the resistors at pin 14. 8. depending on the ratio d c/c 0 of the lc resonant circuit of vco (q 0 > 50; c 0 =c int +c ext ; see table 2). table 1 input frequencies, symbol frequencies and vco frequencies d g if if slip by automatic gain control tuner gain current from 20 to 80% - 68db afc circuit (pin 14); see notes 7 and 8 and fig.4 cr stps(us) control steepness d i 14 / d f if for usa f if = 43.75 mhz 0.7 0.98 1.3 m a/khz cr stps(eu) control steepness d i 14 / d f if for europe f if = 36.15 mhz 0.45 0.70 0.95 m a/khz dvb output signal (if input to dvb output) v o(p-p) output voltage (pin 11) (peak-to-peak value) c l < 15 pf; r l >5k w ; with internal agc 1.8 2.1 2.4 v v o(dc) dc output voltage - 2.5 - v b - 1db - 1 db bandwidth c l < 15 pf; r l >5k w 11 12 - mhz b - 3db - 3 db bandwidth - 17 - mhz a c(dvb) fundamental input signal and if harmonics 35 40 - db a h suppression of in-band harmonics v o = 2.0 v (p-p) 30 35 - db psrr power supply ripple rejection at pin 11 see fig.5 26 36 - db symbol description dvb (europe) dvb (usa) unit f s symbol frequency 6.9 5.0 mhz f if if frequency 36.15 43.75 mhz f vco vco frequency 86.0 97.5 mhz symbol parameter conditions min. typ. max. unit
1998 nov 09 9 philips semiconductors product speci?cation downconverter for dvb TDA9829T fig.3 typical if and tuner agc characteristic. (1) i tuner ; r top =22k w . (2) gain. (3) i tuner ; r top =11k w . (4) i tuner ; r top =0 w . h andbook, full pagewidth 4.5 70 1 2.5 2 1.5 3 3.5 4 v 18 (v) mhb221 50 60 0.06 40 0 1 2 0.6 30 20 6 10 0 60 - 10 gain (db) i tuner (ma) if input (mv rms) (1) (2) (3) (4) fig.4 measurement conditions and typical afc characteristic. handbook, full pagewidth 200 100 0 - 200 - 100 35.75 43.45 36.15 43.75 36.55 44.05 f if (mhz) (source current) (sink current) ( a) i 14 v 14 (v) 4.5 3.5 2.5 1.5 0.5 TDA9829T 14 i 14 22 k w 22 k w mhb222 v p = 5 v v p
1998 nov 09 10 philips semiconductors product speci?cation downconverter for dvb TDA9829T fig.5 ripple rejection condition. handbook, full pagewidth TDA9829T t v p = 5 v v p = 5 v 100 mv (f ripple = 70 hz) mhb223 fig.6 vco control characteristic for dvb (usa). l1 = 115 nh and c1 = 15 pf. handbook, full pagewidth 5 v 10 (v) f vco (mhz) 100 95 01 4 mha661 99 97.5 97 96 98 3 2
1998 nov 09 11 philips semiconductors product speci?cation downconverter for dvb TDA9829T l1 = 248 nh and c1 = 5.6 pf. fig.7 vco control characteristic for dvb (europe). handbook, full pagewidth 5 v 10 (v) 01 4 mha662 3 2 f vco (mhz) 89 88 84 83 87 86 85
1998 nov 09 12 philips semiconductors product speci?cation downconverter for dvb TDA9829T test circuit table 2 test circuit values parameter europe usa if frequency 36.15 mhz 43.75 mhz vco frequency 86.0 mhz 97.5 mhz oscillator circuit toko coil 5km 369sns - 2010z 5km 369sns - 1647z philips ceramic capacitor 2222 632 39478 2222 632 33129 fig.8 test circuit. handbook, full pagewidth mhb224 TDA9829T 20 mute switch (b) mute (a) no mute agc switch dvb agc external vco control top dvb agc adjust (b) agc external (a) agc internal 19 18 17 16 c1 v p = 5 v c agc v p = 5 v afc dvb output tuner agc 10 nf 100 nf 2 v (p-p) bc546 2.2 m f 22 k w 22 k w 51 w 220 w 68 w dvb output 75 w 22 k w (1) (b) (a) (b) (a) l1 15 14 13 12 11 1 1 2 2 n.c. n.c. n.c. 3 3 4 4 5678910 10 m f dvb-if input (1) see table 2. (1) c(vco) = 8.2 pf. (2) c1 = 5.6 pf. (3) l1 = 248 nh. a lfpage mhb225 (1) (2) (3) 15 16 (1) c(vco) = 8.2 pf. (2) c1 = 15 pf. (3) l1 = 115 nh. a lfpage mhb225 (1) (2) (3) 15 16
1998 nov 09 13 philips semiconductors product speci?cation downconverter for dvb TDA9829T internal pin configurations fig.9 pin 1; v sid . handbook, halfpage 1 5 k w 2.65 v mhb226 3.6 v 1.1 k w + fig.10 pin 3; v iif1 and pin 4; v iif2 . handbook, halfpage 3 4 1.1 k w 5 k w 2.65 v mhb227 3.6 v 1.1 k w + + fig.11 pin 5; tadj. handbook, halfpage 5 + 20 k w 9 k w 30 k w mhb228 3.6 v 1.9 v fig.12 pin 6; agcswi. handbook, halfpage 6 + 26 k w mhb229 3.6 v
1998 nov 09 14 philips semiconductors product speci?cation downconverter for dvb TDA9829T fig.13 pin 8; v agc . handbook, halfpage 8 mhb230 + 50 k w fig.14 pin 9; agcadj. handbook, halfpage 9 mhb231 + 1.6 k w 12 k w 10.1 k w 17.2 k w 3.6 v fig.15 pin 10; v vco . handbook, halfpage 10 mhb232 + 50 k w 50 k w 12.5 k w 5 m a 2.7 v vco + fig.16 pin 11; v odvb . handbook, halfpage 11 mhb233 + 5.1 k w 5.1 k w 2.7 ma 10 m a +
1998 nov 09 15 philips semiconductors product speci?cation downconverter for dvb TDA9829T fig.17 pin 12; tagc. handbook, halfpage 12 2.5 ma + mhb234 fig.18 pin 14; afc. handbook, halfpage 14 mhb235 + 200 m a 1 k w 1 k w fig.19 pin 15; vco1 and pin 16; vco2. handbook, halfpage 15 mhb236 + 16 2.8 v + 420 w 420 w fig.20 pin 17; gnd. handbook, halfpage 17 gnd mhb237
1998 nov 09 16 philips semiconductors product speci?cation downconverter for dvb TDA9829T fig.21 pin 18; c agc . handbook, halfpage 18 50 k w 200 m a 200 m a + + mhb238 ++ fig.22 pin 19; v p . handbook, halfpage 19 mhb239 + fig.23 pin 20; muteswi. handbook, halfpage 20 mhb240 + 13 k w 3.6 v
1998 nov 09 17 philips semiconductors product speci?cation downconverter for dvb TDA9829T package outline unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v q references outline version european projection issue date iec jedec eiaj mm inches 2.65 0.30 0.10 2.45 2.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.1 0.4 sot163-1 10 20 w m b p detail x z e 11 1 d y 0.25 075e04 ms-013ac pin 1 index 0.10 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.51 0.49 0.30 0.29 0.050 1.4 0.055 0.419 0.394 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 0 5 10 mm scale x q a a 1 a 2 h e l p q e c l v m a (a ) 3 a so20: plastic small outline package; 20 leads; body width 7.5 mm sot163-1 95-01-24 97-05-22
1998 nov 09 18 philips semiconductors product speci?cation downconverter for dvb TDA9829T soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all so packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1998 nov 09 19 philips semiconductors product speci?cation downconverter for dvb TDA9829T definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 160 1010, fax. +43 160 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 0044 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 printed in the netherlands 545104/750/01/pp20 date of release: 1998 nov 09 document order number: 9397 750 04575


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